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| AO6422 N-Channel Enhancement Mode Field Effect Transistor General Description The AO6422/L uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for general purpose application. AO6422 and AO6422L are electrically identical. -RoHS Compliant -AO6422L is Halogen Free Features VDS = 20V ID = 5A (VGS = 4.5V) RDS(ON) < 44m (VGS = 4.5V) RDS(ON) < 55m (VGS = 2.5V) RDS(ON) < 72m (VGS = 1.8V) TSOP6 Top View D D G 16 25 34 D D S D G S Absolute Maximum Ratings TA=25C unless otherwise noted Symbol 10 Sec Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation A B Steady State 20 8 3.9 3 30 1.1 0.7 Units V V A TA=25C TA=70C TA=25C TA=70C ID IDM PD TJ, TSTG 5 4.2 2.0 1.3 -55 to 150 W C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient Maximum Junction-to-Ambient Maximum Junction-to-Lead C Symbol A A t 10s Steady State Steady State RJA RJL Typ 47.5 74 54 Max 62.5 110 68 Units C/W C/W C/W Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO6422 Electrical Characteristics (TJ=25C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Conditions ID = 250A, VGS = 0V VDS = 20V, VGS = 0V TJ = 55C VDS = 0V, VGS = 8V VDS = VGS ID = 250A VGS = 4.5V, VDS = 5V VGS = 4.5V, ID = 5.0A Static Drain-Source On-Resistance TJ=125C VGS = 2.5V, ID = 4.5A VGS = 1.8V, ID = 3.5A gFS VSD IS Forward Transconductance VDS = 5V, ID = 5.0A Diode Forward Voltage IS = 1A,VGS = 0V Maximum Body-Diode Continuous Current 0.4 30 35 48 43 55 14 0.8 1 2 450 VGS=0V, VDS=10V, f=1MHz VGS=0V, VDS=0V, f=1MHz 74 52 4.9 6.2 VGS= 4.5V, VDS= 10V, ID= 5A 0.4 1.3 4.5 VGS=4.5V, VDS=10V, RL=2, RGEN=3 IF=5A, dI/dt=100A/s 6 33 7.1 13 3.3 17 7.5 8.2 560 44 60 55 72 0.65 Min 20 1 5 100 1 Typ Max Units V A nA V A m m m S V A pF pF DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance pF nC nC nC ns ns ns ns ns nC SWITCHING PARAMETERS Qg (4.5V) Total Gate Charge Qgs Gate Source Charge Qgd tD(on) tr tD(off) tf trr Qrr Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=5A, dI/dt=100A/s A: The value of R JA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A = 25C. in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead R JL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using t 300s pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in curve provides a single pulse rating. Rev0 April 2008 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The SOA THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO6422 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 4.5V 25 20 ID (A) 2V 15 10 5 0 0 1 2 3 4 5 VDS (Volts) Figure 1: On-Region Characteristics 70 Normalized On-Resistance 62 RDS(ON) (m) 54 46 38 30 0 3 6 VGS= 2.5V VGS= 1.8V 1.6 VGS= 4.5V ID= 5A ID(A) 6 4 VGS=1.5V 2 0 0 0.4 0.8 1.2 1.6 2 VGS(Volts) Figure 2: Transfer Characteristics 125C 25C 3V 2.5V 8 10 VDS= 5V 1.4 1.2 VGS= 4.5V 1.0 I9 =-6.5A,12 dI/dt=100A/s F 15 0.8 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature 1E+01 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 120 ID= 5.0A 100 RDS(ON) (m) 80 60 1E+00 1E-01 IS (A) 1E-02 1E-03 1E-04 1E-05 1E-06 125C 25C 125C 40 FUNCTIONS AND RELIABILITY WITHOUT NOTICE. 25C 20 1 2 3 4 5 6 7 8 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage VSD (Volts) Figure 6: Body-Diode Characteristics Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO6422 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 5 4 VGS (Volts) 3 2 1 0 0 1 2 3 4 5 6 7 Qg (nC) Figure 7: Gate-Charge Characteristics VDS= 10V ID= 5A Capacitance (pF) 600 Ciss 400 800 200 Crss 0 Coss 0 5 10 15 20 VDS (Volts) Figure 8: Capacitance Characteristics 100 RDS(ON) limited 10s 1000 TJ(Max)=150C TA=25C 10 1 1ms 10ms 100ms 10s DC Power (W) ID (Amps) 100s 100 10 0.1 TJ(Max)=150C TA=25C 0.1 1 0.01 IF=-6.5A, dI/dt=100A/s 10 100 1 0.00001 0.001 0.1 10 1000 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 ZJA Normalized Transient Thermal Resistance Pulse Width (s) Figure 10: Single Pulse Power Rating Junctionto-Ambient (Note E) 1 D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=110C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD 0.01 Single Pulse Ton T 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance(Note E) Alpha & Omega Semiconductor, Ltd. www.aosmd.com |
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